IRF1010ZPbF mosfet equivalent, power mosfet.
IRF1010ZLPbF
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Fr.
Absolute Maximum Ratings
HEXFET® Power MOSFET
D
VDSS = 55V
G RDS(on) = 7.5mΩ S ID = 75A
TO-220AB
D2Pak
TO-262
IRF1.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive a.
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